International Conference on Power Semiconductors and Electronics ICPSE on December 02-03, 2024 in Tokyo, Japan
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- Short Name: ICPSE
- Event Type: Conference
- Presentation: Physical
- Website URL: https://waset.org/power-semiconductors-and-electronics-conference-in-december-2024-in-tokyo
- Program URL: https://waset.org/conferences-in-december-2024-in-tokyo/program
- Location: Tokyo, Japan
- Date: December 02-03, 2024
- Organization: World Academy of Science, Engineering and Technology
- Conference Tags: power semiconductors
Power semiconductor devices
Power semiconductor device design and physics
High frequency devices
High power devices
Smart power devices
Semiconductor devices for renewable energy applications
Circuit requirements for power diode recitifiers
Structure and performance of Schottky and PIN power diodes
Parasitic circuit elements in power diode recitifiers
Circuit requirements for power transistor switches
Structure and performance of power transistors
Parasitic circuit elements in power transistor switches
Circuit requirements for PNPN thyristors
Structure and performance of PNPN thyristors
Parasitic circuit elements in PNPN thyristors
Implementation of power electronic devices using SiC and GaN
Silicon controlled rectifier
Reverse conducting thyristor
Gate turnoff thyristor
Bipolar junction transistor
Static induction transistor
Metal oxide semiconductor field effect transistor
Insulated gate bipolar transistor
Triode for alternating current
MOS controlled thyristor
Power semiconductor device design and physics
High frequency devices
High power devices
Smart power devices
Semiconductor devices for renewable energy applications
Circuit requirements for power diode recitifiers
Structure and performance of Schottky and PIN power diodes
Parasitic circuit elements in power diode recitifiers
Circuit requirements for power transistor switches
Structure and performance of power transistors
Parasitic circuit elements in power transistor switches
Circuit requirements for PNPN thyristors
Structure and performance of PNPN thyristors
Parasitic circuit elements in PNPN thyristors
Implementation of power electronic devices using SiC and GaN
Silicon controlled rectifier
Reverse conducting thyristor
Gate turnoff thyristor
Bipolar junction transistor
Static induction transistor
Metal oxide semiconductor field effect transistor
Insulated gate bipolar transistor
Triode for alternating current
MOS controlled thyristor
Name: World Academy of Science, Engineering and Technology
Website: https://waset.org/
Address: UAE